An analytical development is given for multifrequency operation of avalanche diodes with a narrow ionization layer. The current response from the avalanche is evaluated in the quasistatic limit. The continuity equations are solved separately in the drift regions. The efficiency at the lowest harmonic is derived. It is found to be necessary to limit the generation of carriers due to the positive space‐charge resistance of the drift regions. The theoretical results are used to analyze two‐frequency operation of two Read diode structures. The analytical approach is quite simple at small and intermediate perturbations. An analog computer program was developed to calculate large signal perturbations. For an effective avalanche width of 0.69‐&mgr; optimum efficiencies of 23&percent; and 34&percent; are predicted for single and two‐frequency operation, respectively.