Energy level and concentration profile measurements of two deep hole traps in boron‐implanted, phosphorus‐doped silicon are reported. The traps are present following annealing at temperatures near 400 °C. The energy levels and emission cross sections of the two traps areEV+(0.671±0.005) eV, (1.7±0.4)×10−15cm2, andEV+(0.471±0.007) eV, (2.2±0.8)×10−16cm2. The concentration profiles of both traps are highly peaked at about 0.31 &mgr;m from the silicon surface, in good agreement with nuclear energy loss profile calculations.