Origin of the charge carriers accumulation/depletion in porous silicon contacted by a liquid phase
作者:
A. Bsiesy,
B. Gelloz,
F. Gaspard,
F. Muller,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 79,
issue 5
页码: 2513-2516
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.361180
出版商: AIP
数据来源: AIP
摘要:
The origin of the electronic free charge carriers accumulation/depletion in the porous silicon skeleton contacted with an electrolyte is determined by investigating the limiting step in the conduction process. Experimental evidences, supported by quantitative considerations, show that the porous silicon can be conductive if the free charge carriers flux supplied by the substrate is not the rate determining step of the electrical current conduction. ©1996 American Institute of Physics.
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