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The degradation of ferroelectric properties of PZT thin films due to plasma damage

 

作者: Kazuya Ishihara,   Tomohiro Ishikawa,   Kazuwki Hamada,   Sigeo Onishi,   Jun Kudo,   Keizo Sakiyama,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1995）
卷期: Volume 6, issue 1-4  

页码: 301-307

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508019373

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The degradation of ferroelectric properties of PZT films due to plasma damage were investigated. Hysteresis loop and leakage current of PZT films were measured before and after plasma exposure and plasma etching. The damage related defects equivalent to positive charge and neutral traps were introduced into PZT films. Recovery of the plasma damage required annealing at 550°C. The influence of deposition damage of SiO2using TEOS-O3also was investigated.

 

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