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Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe...
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Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy
作者:
R. Coratger,
C. Girardin,
J. Beauvillain,
I. M. Dharmadasa,
A. P. Samanthilake,
J. E. F. Frost,
K. A. Prior,
B. C. Cavenett,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 12
页码: 7870-7875
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365395
出版商: AIP
数据来源: AIP
摘要:
Current transport and ballistic electron emission microscopy (BEEM) studies have been carried out on metal contacts fabricated on chemically etchedn-ZnSe epitaxial layers grown by molecular beam epitaxy. The contact materials Ag, Sb, Au, Ge/Au, Sn, Ni, and Pd form one or more barrier heights out of the following seven discrete values: 0.90, 1.20, 1.32, 1.50, 1.67, 1.80, and 2.10±0.04 eV observed to date. BEEM work carried out on Au/n-ZnSe systems has identified four levels 1.32 [Morgan &etal;, J. Appl. Phys.79, 1532 (1996)], 1.50, 1.67 [Coratger &etal;, Phys. Rev. B15, 2357 (1995)] and 1.80 eV to date, confirming Fermi-level pinning at different positions. Schottky barrier formation at metal/n-ZnSe systems cannot be explained by the simple Schottky model. The strong Fermi-level pinning observed could be due to bulk and/or surface defects of the ZnSe material. ©1997 American Institute of Physics.
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