Influence of quasi-two-dimensional doping on the Raman spectrum ofSi1−xGex/Siquantum wells
作者:
M. Bendayan,
R. Beserman,
K. Dettmer,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 12
页码: 7956-7960
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365370
出版商: AIP
数据来源: AIP
摘要:
We present a study of p-doping influence on the Raman spectrum of thin SiGe quantum wells. We observe a laser wavelength dependence of the phonon frequencies. We show that the quantum confinement induces special effects which can be described by the renormalization of the phonon energy by the free charge continuum transitions. It is shown that the polarization of the laser and of the phonon can probe the confinement and the density of states of the quasi-free holes. ©1997 American Institute of Physics.
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