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Influence of quasi-two-dimensional doping on the Raman spectrum ofSi1−xGex/Siquantum wells

 

作者: M. Bendayan,   R. Beserman,   K. Dettmer,  

 

期刊: Journal of Applied Physics  (AIP Available online 1997)
卷期: Volume 81, issue 12  

页码: 7956-7960

 

ISSN:0021-8979

 

年代: 1997

 

DOI:10.1063/1.365370

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present a study of p-doping influence on the Raman spectrum of thin SiGe quantum wells. We observe a laser wavelength dependence of the phonon frequencies. We show that the quantum confinement induces special effects which can be described by the renormalization of the phonon energy by the free charge continuum transitions. It is shown that the polarization of the laser and of the phonon can probe the confinement and the density of states of the quasi-free holes. ©1997 American Institute of Physics.

 

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