Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration
作者:
I. K. Shmagin,
J. F. Muth,
R. M. Kolbas,
S. Krishnankutty,
S. Keller,
U. K. Mishra,
S. P. DenBaars,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 4
页码: 2021-2023
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364058
出版商: AIP
数据来源: AIP
摘要:
Optically pumped lasing from InGaN/GaN single heterojunctions (SH) was observed in an edge emitting configuration at 77 K. The heterojunctions were grown by atmospheric pressure metalorganic chemical vapor deposition onc-plane sapphire substrates. The frequency tripled output of a mode-locked titanium:sapphire laser with a pulse width of 250 fs, operating at 280 nm, was used as the photoexcitation source. The nonlinear dependence of output emission intensity on input power density, the observations of a strongly polarized output emission, and distinct Fabry–Perot modes are discussed. ©1997 American Institute of Physics.
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