Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si+ions to doses ranging from 3.6×1011to 2×1014cm−2. Room‐temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4×1013cm−2, up to 70% of the initial damage (displaced atoms) annealed out over a period of ≊85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constantst1<5 days and a longert2≊100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant‐induced vacancies is associated with the reordering of the InP lattice.