Zinc cadmium telluride solid solution films with zinc/cadmium ratios as high as 40% have been deposited onto graphite substrates by the close‐spaced vapor transport method, using sources consisting of polycrystalline zinc cadmium telluride or mixtures of cadmium telluride and zinc telluride powders. High zinc concentrations in the films have been obtained by using small temperature differences for atmospheric pressure depositions, and by depositions under low pressures (0.3 Torr) for larger temperature differences. Hole densities of 5×1015cm−3were obtained with no intentional doping and with no dependence on the zinc concentration. Heterojunctions with cadmium sulfide were prepared to explore the junction properties of these films.