Domain behavior in lead zirconate titanate (PZT) thin film capacitors
作者:
InKyeog Yoo,
SeshuB. Desu,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 6,
issue 1-4
页码: 329-336
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508019376
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Domain behavior based on surface energy and volumetric free energy was discussed in relation to imprint. Surface enery and volumetric free energy result in net free energy, which determines the critical size for domain growth. If a domain size is greater than the critical size, they will grow spontaneously under a constant electric field or even under zero electric field. Sometimes, they can grow to the extent that they dominate reverse domains. This phenomenon appears to be polarization reversal under zero voltage bias. Spontaneous domain growth either under zero electric field or a constant electric field was demonstratred. This phenomenon can be partly a source of asymmetric imprint mechanism.
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