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Domain behavior in lead zirconate titanate (PZT) thin film capacitors

 

作者: InKyeog Yoo,   SeshuB. Desu,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1995)
卷期: Volume 6, issue 1-4  

页码: 329-336

 

ISSN:1058-4587

 

年代: 1995

 

DOI:10.1080/10584589508019376

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Domain behavior based on surface energy and volumetric free energy was discussed in relation to imprint. Surface enery and volumetric free energy result in net free energy, which determines the critical size for domain growth. If a domain size is greater than the critical size, they will grow spontaneously under a constant electric field or even under zero electric field. Sometimes, they can grow to the extent that they dominate reverse domains. This phenomenon appears to be polarization reversal under zero voltage bias. Spontaneous domain growth either under zero electric field or a constant electric field was demonstratred. This phenomenon can be partly a source of asymmetric imprint mechanism.

 

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