首页   按字顺浏览 期刊浏览 卷期浏览 Introduction and annealing of defects inn-type gaas following irradiation with electron...
Introduction and annealing of defects inn-type gaas following irradiation with electrons and gamma rays

 

作者: T.I. Kolchenko,   V.M. Lomako,  

 

期刊: Radiation Effects  （Taylor Available online 1978）
卷期: Volume 37, issue 1-2  

页码: 67-72

 

ISSN:0033-7579

 

年代: 1978

 

DOI:10.1080/00337577808242088

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The formation of radiation defects in n-type GaAs during irradiation with 28-MeV electrons and Co60gamma rays has been studied as a function of the degree of doping and type of dopant. It has been found that irradiation with electrons generates isolated defectsA, Band defect clustersR, while irradiation with Co60gamma rays creates isolated defectsBandC.

 

点击下载:  PDF (431KB)



返 回