Ideal hydrogen termination of the Si (111) surface
作者:
G. S. Higashi,
Y. J. Chabal,
G. W. Trucks,
Krishnan Raghavachari,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 7
页码: 656-658
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102728
出版商: AIP
数据来源: AIP
摘要:
Aqueous HF etching of silicon surfaces results in the removal of the surface oxide and leaves behind silicon surfaces terminated by atomic hydrogen. The effect of varying the solutionpH on the surface structure is studied by measuring the SiH stretch vibrations with infrared absorption spectroscopy. Basic solutions ( pH=9–10) produce ideally terminated Si(111) surfaces with silicon monohydride ( 3/4 SiH) oriented normal to the surface. The surface is found to be very homogeneous with low defect density (<0.5%) and narrow vibrational linewidth (0.95 cm−1).
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