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Self‐annealing of ion‐implanted silicon: First experimental results

 

作者: G. F. Cembali,   P. G. Merli,   F. Zignani,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 38, issue 10  

页码: 808-810

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92139

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The first use of an ion beam to dope a silicon specimen by implantation and to anneal it in a single operation is reported. Experimental conditions as well as electrical and structural characterizations of self‐annealed specimens are presented.

 

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