Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes
作者:
P. Viktorovitch,
G. Moddel,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 9
页码: 4847-4854
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328319
出版商: AIP
数据来源: AIP
摘要:
We present a general model of the frequency dependence of conductance and capacitance ina‐Si:H Schottky diodes. In order to circumvent several questionable assumptions required in the analysis of capacitance voltage characteristics, the frequency dependence of sputtereda‐Si:H devices is measured with no applied dc voltage. We obtain independent, consistent values of the depletion width and of the density of states at the Fermi level and below from both conductance and capacitance at both low and high modulation frequencies. We show that the linear frequency dependence of conductance cannot be attributed to hopping conductance, but rather to the interaction of gap states with free carriers. Our study shows that the interaction kinetics of the states around the Fermi level with the conduction‐band carriers is so fast that the response of the diode is limited by the band transport of these carriers, which rapidly thermalize and distribute themselves through the continuum of states from the conduction band to the Fermi level.
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