High quality interfaces in GaAs–AlAs quantum wells determined from high resolution photoluminescence
作者:
D. C. Reynolds,
D. C. Look,
B. Jogai,
R. Kaspi,
K. R. Evans,
M. Estes,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1997)
卷期:
Volume 15,
issue 5
页码: 1703-1706
ISSN:1071-1023
年代: 1997
DOI:10.1116/1.589358
出版商: American Vacuum Society
关键词: (Al,Ga)As
数据来源: AIP
摘要:
High resolution photoluminescence (PL) measurements performed on several GaAs–AlAs quantum well structures revealed sharp excitonic transitions separated in energies corresponding to roughly half-monolayer fluctuations in well size. The narrow linewidths correlate with interface island structure whose lateral extent is either much larger or much smaller than the exciton diameter. The half-monolayer separation results from a sharply peaked PL intensity response occurring around those areas of the laterally nonuniform interface which have roughly 50% island coverage, with the average island size much smaller than the exciton diameter, about 225 Å.
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