Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices
作者:
F. Julien,
P. D. Swanson,
M. A. Emanuel,
D. G. Deppe,
T. A. DeTemple,
J. J. Coleman,
N. Holonyak,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 14
页码: 866-868
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98015
出版商: AIP
数据来源: AIP
摘要:
Layer intermixing in GaAs‐AlGaAs superlattices achieved by Zn thermal diffusion has been used to fabricate buried channel optical waveguides. Linear waveguides with small, abrupt bends were made and light was seen to be transmitted through these for bend angles up to 7.5 degrees corresponding to an effective index of refraction difference of 0.9% for a 50% average Al composition of the layers bounding the superlattice. For radiation between the band gap of bulk GaAs (870 nm) and the effective band gap of a 10‐nm GaAs quantum well (840 nm), the 3‐mm‐long waveguides appeared to be semitransparent suggesting a possible use in planar, buried channel all‐semiconductor integrated optoelectronics.
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