Effect of post‐etch treatment on chlorine concentration of AlSi and Ti‐capped AlSi films
作者:
Jer‐shen Maa,
Herman Gossenberger,
Richard J. Paff,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 5
页码: 1052-1057
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584959
出版商: American Vacuum Society
关键词: ALUMINIUM SILICIDES;FILMS;TITANIUM;COATINGS;ETCHING;CORROSION;X−RAY FLUORESCENCE ANALYSIS;CHLORINE;QUANTITY RATIO;Al–Si;Ti
数据来源: AIP
摘要:
Ti‐capped Al–Si films are more susceptible to post‐etch corrosion than uncapped Al–Si films. The extent of corrosion of Ti‐capped films is related to post‐etch treatment. Various post‐etch treatments to reduce chlorine concentration are evaluated by x‐ray fluorescence analysis. Results of single‐ and multiple‐step treatment, such as baking, partial resist stripping in oxygen plasma in the exit chamber, water rinse, and resist partial stripping followed by wet stripping are presented. A method to estimate the surface concentration of chlorine in atoms/cm2is described; the chlorine concentration in most cases is less than 5×1015atoms/cm2.
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