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Band offsets and electron localization in semiconductor interfaces and superlattices

 

作者: C. C. Matthai,   J. M Bass,   M. Oloumi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 4  

页码: 916-919

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584942

 

出版商: American Vacuum Society

 

关键词: SUPERLATTICES;BAND STRUCTURE;BAND THEORY CALCULATIONS;SEMICONDUCTOR JUNCTIONS;VALENCE BANDS;LOCALIZED STATES;Si;Ge;InAs;GaSb

 

数据来源: AIP

 

摘要:

The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We show that the valence‐band discontinuity can be extracted from a knowledge of the local density of states across the interface. This method can also be used to determine the band offsets in superlattice structures. The concept of band offsets in short period superlattices is examined. It is shown that this is intimately connected with the localization of bands in one or other of the superlattice constituents.

 

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