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Hydrogen Adsorbed on Silicon Carbide Creates Metallic Surface States

 

作者: Mark Wilson,  

 

期刊: Physics Today  (AIP Available online 1903)
卷期: Volume 56, issue 6  

页码: 18-20

 

ISSN:0031-9228

 

年代: 1903

 

DOI:10.1063/1.1595042

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Silicon is the workhorse of the microelectronics industry. But it has its limitations. Researchers who demand high‐temperature, high‐voltage, and high‐frequency properties in their semiconductors turn instead to a sister material, silicon carbide. Thanks to its larger band gap, SiC remains semiconducting at much higher temperatures, melts at 2800°C, and has a hardness exceeded only by diamond.

 

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