Binary collision simulations of ion transmission through silicon single crystal films
作者:
C.S. Murthy,
L.R. Logan,
G.R. Srinivasan,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1994)
卷期:
Volume 130-131,
issue 1
页码: 175-186
ISSN:1042-0150
年代: 1994
DOI:10.1080/10420159408219780
出版商: Taylor & Francis Group
关键词: ion transmission;stopping power;binary collision simulation
数据来源: Taylor
摘要:
Computer simulation studies of the energy distribution of transmitted ions such as alpha-particles, He-, and B-ions through crystalline silicon, using the enhanced binary-collision cascade simulator MARLOWE, will be reviewed. The enhancement includes an additional electronic-energy loss (EEL) model which takes into account explicitly both the target electron density variation via the structure factors and the electron density of the projectile. Investigations of the stopping power for He ions and protons in silicon, at intermediate- and high-energies, based on the adapted EEL model and a velocity-dependent effective charge will be presented. The overall agreement between the calculated and experimentally determined stopping power data and the simulated and measured transmission spectra will be demonstrated. Effects of energy-loss straggling, core-electron contribution to the energy loss at high-energies and charge-state effects at low energies on the transmission spectra will also be discussed.
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