The orientation of Pb(Zr,Ti)O3(PZT) thin films grown by sputtering on a Si/SiO2/Ti/Pt substrate using aPbTiO3(PT) buffer layer was controlled by changing the thickness of the buffer layer. The x-ray diffraction of PT as a function of the thickness, in the range of 20–400 Å, showed modification of the PT orientation. That suggests a gradual evolution of the lattice parameters in the nucleation stage of PT films. The main growth mechanism was certainly due to the passing from an island growth to a continuous layer. The (111) oriented and (100) oriented PZT films were grown on 50 and 200 Å PT buffer layers, respectively. ©1997 American Institute of Physics.