Photoinduced structural defect levels in amorphous selenium films
作者:
M. N. Kamalasanan,
Suresh Chand,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 4
页码: 330-332
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102799
出版商: AIP
数据来源: AIP
摘要:
Thermally stimulated discharge (TSD) behavior of native (dark rested) and irradiated amorphous selenium films (∼100 &mgr;m) has been studied. The TSD spectrum of nonirradiated films shows electron trapping levels at ∼0.99 eV and no detectable hole trapping levels. On the other hand, the irradiated films show both electron as well as hole trapping levels at 0.99 and 1.05 eV, respectively. These results have been explained in terms of trapping of charge carriers at intrinsic defect states and the photoinduced defect levels created during irradiation.
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