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Electrical and structural properties of Ag‐X diffusion couples (X = Te, Se, S, and I)

 

作者: J. J. Hauser,  

 

期刊: Journal of Applied Physics  (AIP Available online 1982)
卷期: Volume 53, issue 5  

页码: 3634-3638

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331145

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The deposition of Te on an already deposited Ag film and of Ag on a Te film results in a homogeneous Ag‐Te alloy as a result of fast Ag diffusion (4×105A˚2sec−1at 300 K). In the case of Ag‐Te, when the diffusion proceeds at 200 K, the resulting diffusion couple is amorphous.Insituresistance measurements suggest that the same Ag diffusion mechanism operates when Ag atoms or Ag films are in contact with Se (7.3×104A˚2sec−1at 253 K), S, or I. The major difference with the Ag‐Te case is that in the latter cases, even when the Ag diffusion proceeds at low temperatures (?200 K), the resulting diffusion couples are always crystalline Ag2Se, Ag2S, or AgI.

 

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