A mechanism of amorphization-crystallization processes in irradiated semiconductors
作者:
I.V. Verner,
V.V. Tsukanov,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1989)
卷期:
Volume 111-112,
issue 1-2
页码: 461-466
ISSN:1042-0150
年代: 1989
DOI:10.1080/10420158908213020
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A possible atomic mechanism of amorphization-crystallization processes in irradiated diamond-type semiconductors is proposed in the present work. This mechanism is based on the concept of a phase transition into a new state with participation of point defects and can be considered as a basis for the kinetic description of amorphization-crystallization processes in semiconductors during irradiation.
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