Thickness‐Dependent Oscillatory Behavior of Resistivity and Hall Coefficient in Thin Single‐Crystal Bismuth Films
作者:
V. P. Duggal,
Raj Rup,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 2
页码: 492-495
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657426
出版商: AIP
数据来源: AIP
摘要:
Measurements of electrical resistivity and Hall coefficient of single‐crystal bismuth films evaporated on hot mica substrates, in the thickness range 250–1700 Å, were made at room temperature and 90°K. Resistivity and Hall coefficient of these films showed an oscillatory dependence on film thickness on account of the quantum size effect. The experimental period of the oscillations agrees with the theory of quantum size effect at these thicknesses. Detailed electron transmission studies were made to investigate the reported disagreement between experimental curves and theoretical predictions at small thicknesses. The role of structure on the behavior of resistivity and Hall coefficient of thinner films is discussed.
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