FeP precipitates in hydride‐vapor phase epitaxially grown InP:Fe
作者:
M. Luysberg,
R. Göbel,
H. Janning,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 4
页码: 2305-2309
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587757
出版商: American Vacuum Society
关键词: INDIUM PHOSPHIDES;IRON ADDITIONS;BINARY COMPOUNDS;VPE;MICROSTRUCTURE;IRON PHOSPHIDES;TEM;PRECIPITATES;InP:Fe;FeP
数据来源: AIP
摘要:
Fe‐doped InP was grown by hydride‐vapor phase epitaxy. Doping levels up to 8×1018cm−3were determined by secondary ion mass spectrometry. Additionally performed photoluminescence measurements revealed a homogeneous distribution of electrically active Fe atoms. From microstructural investigations by analytical transmission electron microscopy, spherical‐shaped precipitates were detected in plan‐view samples. These precipitates with diameters up to 13 nm are homogeneously arranged in the epilayer. For conglomerates of precipitates a distinct enrichment with Fe and P was measured by a comparative energy dispersive x‐ray analysis. The lattice plane distances of the precipitates were deduced from the electron diffraction patterns and from high‐resolution electron micrographs. A comparison with calculated values for different Fe–P alloys indicates that the precipitates consist mainly of orthorhombic FeP.
点击下载:
PDF
(582KB)
返 回