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Improved uniformity of PtSi Schottky barrier diodes formed using an ion mixing scheme

 

作者: C. A. Hewett,   M. G. Fernandes,   S. S. Lau,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 1  

页码: 524-527

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345237

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Low dose ion implantation through the Pt/Si silicon interface prior to annealing has been shown to yield a more planar PtSi/Si interface after annealing. The electrical characteristics of these ion mixed diodes have also been shown to be more uniform from device to device as well as more nearly approaching theoretical performance than conventionally prepared diodes.

 

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