Influence of oxygen on silicon resistivity
作者:
V. Cazcarra,
P. Zunino,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 8
页码: 4206-4211
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328278
出版商: AIP
数据来源: AIP
摘要:
The influence of oxygen on the resistivity of dislocation‐free silicon wafers was studied after annealing at various temperatures under a nitrogen ambient. Significant resistivity shifts were observed in the temperature range 600–900 °C and related to oxygen precipitation. This phenomenon is independent of the well‐known donor generation observed around 450 °C and is more difficult to cure.
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