Electron‐beam induced current (EBIC) was investigated as a possible method of determining shallow junction depth. Molecular‐beam epitaxy Sin+/pjunctions 200–1800 Å deep were explored with both cross‐sectional and plan‐view EBIC geometry. Cross‐sectional EBIC analysis proves to be accurate and reproducible in determining the center of the depletion region for the deep junctions (1800 Å) when using a conventional scanning electron microscopy (SEM) with a LaB6filament. Confidence in the location of shallow junctions decreases due to sample drift and the resolution limits of the SEM and EBIC techniques. In the plan‐view geometry, in which the EBIC current is recorded as a function of electron beam energy, we can distinguish between shallow junctions with greater precision than deeper junctions. Collection efficiency versus electron‐beam energy curves reveal junction depth through shifts in both peak position and height. The collection efficiency versus electron‐beam energy curves were modeled assuming then+layer is equivalent to a Schottky barrier. The model agrees well with peak shifts, but carrier loss due to then+layer must be implemented to sufficiently describe the change in peak height.