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Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

 

作者: I. Grave´,   S. C. Kan,   G. Griffel,   S. W. Wu,   A. Sa’ar,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 2  

页码: 110-112

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104970

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two‐state optical memory is demonstrated.

 

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