PHOSPHOROUS‐ION‐IMPLANTED CdS
作者:
W. W. Anderson,
J. T. Mitchell,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 12,
issue 10
页码: 334-336
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1651841
出版商: AIP
数据来源: AIP
摘要:
High energy phosphorous ions implanted into CdS have given evidence of conductivity type conversion after careful post‐annealing. Thermal probe measurements consistently showedp‐type conductivity on the implanted surface. Diodes fabricated from implanted material show good rectification characteristics, low voltage electroluminescence, and double‐injection phenomena at room temperature.
点击下载:
PDF
(200KB)
返 回