Dimension scaling of1/fnoise in the base current of quasiself-aligned polysilicon emitter bipolar junction transistors
作者:
P. Llinares,
D. Celi,
O. Roux-dit-Buisson,
G. Ghibaudo,
J. A. Chroboczek,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2671-2675
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366082
出版商: AIP
数据来源: AIP
摘要:
Experimental results on low frequency noise in quasiself-aligned bipolarn-p-njunction transistors, with widely varying emitter/base junction dimensions are presented and compared with former results obtained on devices of the same type. The power spectral density of base current fluctuations was found to depend linearly on the inverse of the area of the emitter/base interface junction, implying localization of the low frequency noise sources on the interface, rather than on the transistor perimeter. An application of current-to-voltage converters for studies of current fluctuations is also discussed and compared with a more conventional technique. ©1997 American Institute of Physics.
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