Passivation of GaAs surface by sulfur glow discharge
作者:
Xiaoyuan Hou,
Xiying Chen,
Zheshen Li,
Xunmin Ding,
Xun Wang,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1429-1431
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117604
出版商: AIP
数据来源: AIP
摘要:
A new sulfur passivation technique, the sulfur vapor glow discharge, has been developed to form a thick sulfide layer on GaAs surface. By using Auger electron spectroscopy and x‐ray photoelectron spectroscopy measurements, the main composition of the passivation layer is found to be gallium sulfide without the existence of unstable As–S bonds. The stability of the passivation effect is demonstrated by the nondecaying behavior of the photoluminescence intensity of the GaAs passivation surface under the illumination of the laser beam with very high intensity. ©1996 American Institute of Physics.
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