Delayed optical detection of magnetic resonance for defects in Si and GaAs
作者:
W. M. Chen,
B. Monemar,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 68,
issue 5
页码: 2506-2509
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.346517
出版商: AIP
数据来源: AIP
摘要:
We report on a modified optically detected magnetic resonance (ODMR) technique, here called delayed ODMR (D‐ODMR), for studies of geometric (atomic) and electronic structure of defects in semiconductors. This D‐ODMR technique is shown to be very successful in overcoming the dominating optically detected cyclotron resonance background signal in ODMR studies of defects in Si and GaAs.
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