A detailed comparison of two‐dimensional near‐infrared absorption maps and x‐ray topographs of commercial semi‐insulating (100) GaAs wafers grown by the liquid‐encapsulated Czochralski technique is reported. The absorption measurements with a spatial resolution up to 100×100 &mgr;m2were performed using a highly sensitive silicon diode array as the detector element. Fluctuations of the EL2 concentration up to 60% are found in conventional undoped wafers. In preannealed wafers, these fluctuations are reduced by a factor of 2, approximately. The spatial one‐to‐one correlation of the EL2 distribution with grown‐in dislocation networks, which is observed in both cases, is discussed. In indium‐doped wafers of low dislocation density, the homogeneity of EL2 is better than 5% in the central area of about 40 mm in diameter. By investigating the EL2 distribution near peripheral slip lines, it is definitely established that gettering is a relevant process leading to nonuniformities.