Shallow levels, deep levels and electrical characteristics in Zn‐doped GaInP/InP
作者:
J. F. Chen,
J. C. Chen,
Y. S. Lee,
Y. W. Choi,
K. Xie,
P. L. Liu,
W. A. Anderson,
C. R. Wie,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 8
页码: 3711-3716
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345011
出版商: AIP
数据来源: AIP
摘要:
Zn‐doped GaxIn1−xP epilayers grown by metalorganic chemical vapor deposition have been studied in a wide range of GaP mole fraction. The Zn distribution coefficient was studied as a function of alloy composition. With a constant flow rate of diethylzinc, a decreasing net hole concentration was observed with increasing GaP mole fraction. TheI‐Vcharacteristics of Au onp‐GaxIn1−xP Schottky diodes show a deviation from an ideal thermionic behavior as the lattice mismatch increases. This deviation was analyzed in terms of the shunt resistance which decreased exponentially with the mismatch. A dominant hole trap located atEV+0.84 eV was detected by deep‐level transient spectroscopy in a Ga0.032In0.968P layer. The density of this hole trap significantly increases with increasing lattice mismatch.
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