Interface compound formation and dependence on In‐layer thickness in Ni/In thin‐film systems
作者:
R. Platzer,
U. Wo¨hrmann,
X. L. Ding,
R. Fink,
G. Krausch,
B. Luckscheiter,
J. Voigt,
G. Schatz,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 25
页码: 2904-2906
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104717
出版商: AIP
数据来源: AIP
摘要:
Interdiffusion and interface compound formation has been observed at the system Ni/In by using thin‐film couples as well as thin In films on low index Ni single‐crystal substrates. The method applied was the perturbed &ggr;&ggr;‐angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.
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