The self‐diffusion preexponential factorD0=8.0 cm2/s and activation energyQ=4.1 eV for intrinsic silicon have been determined with the ( p,&ggr;) resonance broadening method in the temperature region 900–1100 °C, in a first application of this method to self‐diffusion measurements. Its suitability was tested by extending the self‐diffusion measurements to lower temperatures than those performed with other methods.