Oxygenation and possible etching of high Tcsuperconducting films by oxygen plasma
作者:
M. W. Ruckman,
R. C. Budhani,
S. L. Qui,
期刊:
AIP Conference Proceedings
(AIP Available online 1990)
卷期:
Volume 200,
issue 1
页码: 114-121
ISSN:0094-243X
年代: 1990
DOI:10.1063/1.39052
出版商: AIP
数据来源: AIP
摘要:
The use of a radio frequency (RF) excited oxygen plasma for cleaning and oxygenation of high Tcsuperconducting films at room temperature is studied by photoemission spectroscopy. Plasma oxidation at ∼10 mT pressure, removes comtaminants like carbon and causes the Ba 5p and 4d and the 0 ls corelevels to shift to lower binding energy. Valence band spectra for an epitaxial Y2Ba4Cu8O15+xfilm on SrTiO3(001) show a Fermi edge and resemble spectra presented by other groups for YBa2Cu3O7single crystals and epitaxial films. These films also show a sharp 0 ls corelevel near 528 eV. Possible reactive ion etching of a degraded YBCO film surface is demonstrated in a series of spectra taken after successive oxygen plasma treatments. A surface contaminated with BaCO3becomes barium deficient after the initial plasma treatment but a second plasma treatment of a substrate biased to −200 V to promote sputtering produces photoemission features typical of an YBa2Cu3O7surface.
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