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Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxialCuInSe2

 

作者: A. J. Nelson,   G. Berry,   Angus Rockett,   D. K. Shuh,   J. A. Carlisle,   D. G. J. Sutherland,   L. J. Terminello,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 14  

页码: 1873-1875

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118717

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Synchrotron radiation soft x-ray photoemission spectroscopy was used to directly observe Se3dcore-level binding energy shifts from surface atoms of the (100) face of epitaxialCuInSe2/ GaAs(100). High-resolution spectra show two sets of Se3d5/2,3/2spin-orbit components separated by 0.6 eV, with the low-binding-energy peaks being associated with the surface atoms. However, surface state emission from Sepstates in the valence band was not observed due to the low photoionization cross sections. Cation bonding-antibonding states were observed in the valence band and are centered at about 1.0 and 3.1 eV below the valence band edge. ©1997 American Institute of Physics.

 

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