Observation of core-level binding energy shifts between (100) surface and bulk atoms of epitaxialCuInSe2
作者:
A. J. Nelson,
G. Berry,
Angus Rockett,
D. K. Shuh,
J. A. Carlisle,
D. G. J. Sutherland,
L. J. Terminello,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 14
页码: 1873-1875
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118717
出版商: AIP
数据来源: AIP
摘要:
Synchrotron radiation soft x-ray photoemission spectroscopy was used to directly observe Se3dcore-level binding energy shifts from surface atoms of the (100) face of epitaxialCuInSe2/ GaAs(100). High-resolution spectra show two sets of Se3d5/2,3/2spin-orbit components separated by 0.6 eV, with the low-binding-energy peaks being associated with the surface atoms. However, surface state emission from Sepstates in the valence band was not observed due to the low photoionization cross sections. Cation bonding-antibonding states were observed in the valence band and are centered at about 1.0 and 3.1 eV below the valence band edge. ©1997 American Institute of Physics.
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