Cation vacancy formation and migration in the AlGaAs heterostructure system
作者:
P. Mitev,
S. Seshadri,
L. J. Guido,
D. T. Schaafsma,
D. H. Christensen,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3718-3720
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122874
出版商: AIP
数据来源: AIP
摘要:
A simple experimental approach has been employed to obtain thermochemical parameters for cation vacancy formation and migration in the AlGaAs heterostructure system. Cation vacancies are injected into the free surface by annealing under an arsenic-rich ambient. Their presence is detected by monitoring the local rate of Al–Ga interdiffusion at imbedded quantum well markers. The sample is unusually thick allowing us to separately identify contributions from the vapor, epilayer, and substrate phases. The entropies and enthalpies of vacancy formation and migration are(5.2±5.7) kBand(1.8±0.5) eVand(11.3±4.4) kBand(3.3±0.4) eV,respectively. ©1998 American Institute of Physics.
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