The reverse current and carrier lifetime have been measured in a series of germanium diodes as a function of temperature between room temperature and liquid nitrogen temperature. The lifetime reaches a plateau at low temperatures, and its behavior can be explained in terms of the Hall‐Shockley‐Read recombination theory. LogiRvs1/Texhibits a break to a shallower slope at lower temperatures, which can be explained in terms of charge generation by recombination centers in the space‐charge region.