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Electroluminescence emission from indium oxide and indium‐tin‐oxide

 

作者: C. Falcony,   J. R. Kirtley,   D. J. DiMaria,   T. P. Ma,   T. C. Chen,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 9  

页码: 3556-3558

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335730

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electroluminescence emission from indium‐tin‐oxide (ITO) and indium oxide films incorporated in a Si‐rich SiO2‐SiO2‐ITO (In2O3) multiple‐layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.

 

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