The production of VHSIC and microwave devices has shown that submicron lithography by e‐beam, optical, or x‐ray systems is rapidly becoming feasible. There is, however, a demand developing for a nanolithography tool for producing GaAs devices and for investigating the physics of scaling of silicon semiconductor devices. We have developed an electron beam lithography system, the JBX‐5D II, which is effective in fabricating both submicron and nanometric devices. The system employs a high brightness single crystal (100) LaB6cathode and an in‐lens octupole deflector. The JBX‐5D II is fully computer controlled which permits automatic switching of the accelerating voltage between 50 and 25 kV, of writing modes between large and small currents, and of different scanning fields. The ability to switch writing modes permits rapid writing of devices with geometries as small as 10 nm with a fine beam and a coarser beam to be used on larger geometries. The present paper deals with some of the characteristics occurring after switching between writing modes. Experimental results will also be reported on voltage stability and probe currents. The mark detection technology for nanometer writing will be presented along with experimental results for an 80 Å probe size.