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Characterization of polycrystalline silicon contacts by photoconductance measurements

 

作者: Bahram Jalali,   Edward S. Yang,   Ping Mei,  

 

期刊: Journal of Applied Physics  （AIP Available online 1990）
卷期: Volume 67, issue 4  

页码: 1953-1956

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345573

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The confinement of minority carriers by polycrystalline silicon (polysilicon) contacts has been studied using the photoconductivity technique. Steady‐state and transient optical measurements show a dramatic increase of stored carriers by these contacts. From a thermionic‐diffusion model, a barrier height of 130 meV for the polysilicon/silicon contact has been extracted.

 

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