A complete investigation of the kinetics for defect generation by Stutzmann, Jackson, and Tsai (SJT) necessitates numerical solution of the rate equations. The time where saturation of defects occurs, depends critically on temperature and activation energy for annealing. This saturation time can vary by orders of magnitude according to different experimental conditions. It is shown how high‐intensity light or 20 keV‐electron irradiation data can be explained in terms of the SJT model.