Optical absorption and photoconductivity in thermally grown SiO2films
作者:
R. J. Powell,
M. Morad,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 4
页码: 2499-2502
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325099
出版商: AIP
数据来源: AIP
摘要:
Optical transmission of unbacked thin films of thermally grown SiO2films were measured in the vacuum uv. The absorption data indicate a band gap of 8.0±0.2 eV for SiO2, and this value is confirmed by measurements of electron and hole photoconductivity and positive charging thresholds in MOS samples. The observation of hole photoconductivity near 8 eV shows that the uppermost valence levels in SiO2are not nearly atomic, but form a band with sufficient orbital overlap that readily transport holes at room temperature.
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