Properties of GaN tunneling MIS light‐emitting diodes
作者:
O. Lagerstedt,
B. Monemar,
H. Gislason,
期刊:
Journal of Applied Physics
(AIP Available online 1978)
卷期:
Volume 49,
issue 5
页码: 2953-2957
ISSN:0021-8979
年代: 1978
DOI:10.1063/1.325137
出版商: AIP
数据来源: AIP
摘要:
MIS structures on GaN consisting of Au‐NaI‐GaN or Au‐Al2O3‐GaN with insulator thickness <100 A˚ have been fabricated with the aim of producing light‐emitting diodes with emission in the uv and blue spectral region at low bias.I‐Vcharacteristics are consistent with a tunneling carrier transport mechanism, and light emission typically occurs for voltages 2–3 V. The spectral behavior of electroluminescence (EL) is in good agreement with photoluminescence (PL) data in the uv and blue spectral region. Suggestions for further work to improve radiant power output from such devices are presented.
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