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Effect of Electron Bombardment on the Near‐Infrared Fluorescence of Single‐Crystal CdS

 

作者: B. A. Kulp,  

 

期刊: Journal of Applied Physics  (AIP Available online 1961)
卷期: Volume 32, issue 10  

页码: 1966-1969

 

ISSN:0021-8979

 

年代: 1961

 

DOI:10.1063/1.1728272

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Under electron bombardment at 40°C, two fluorescence bands in the near infrared are observed in many CdS crystals. The bands are at about 8500 A and 1.05&mgr;. The 8500‐A band is reduced in intensity by electron bombardment at 100 and 275 Kev and by exposure to x radiation. The 1.05−&mgr;band is not greatly affected by these irradiations. Heat treatment for ½ hr at 200°C partially restores the 8500‐A band. The effect is interpreted as a redistribution of electrons over the existing defects. The defect responsible for the 8500‐A band is believed to be copper in a particular ionization state. The 1.05−&mgr;band is observed to appear after heat treatment at 200°C if it is not present originally. This fact makes the origin of this latter band uncertain.

 

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