Importance of controlling the Tl‐oxide partial pressure throughout the processing of TlBa2CaCu2O7thin films
作者:
M. P. Siegal,
E. L. Venturini,
P. P. Newcomer,
D. L. Overmyer,
F. Dominguez,
R. Dunn,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 12
页码: 7186-7191
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360428
出版商: AIP
数据来源: AIP
摘要:
TlBa2CaCu2O7(Tl‐1212) superconducting films 5000–6000 A˚ thick have been grown on LaAlO3(100) substrates using oxide precursors in a closed two‐zone thallination furnace. Tl‐1212 films can be grown with transition temperatures ∼100 K, and critical current densities measured by magnetization ofJcm(5 K)≳107A/cm2andJcm(77 K)≳105A/cm2. Processing conditions, substrate temperatures and Tl‐oxide source temperatures are found which result in smooth, nearly phase‐pure Tl‐1212 films. Variations in the respective temperature ramps of the Tl‐oxide zone and the substrate zone can greatly influence resulting film properties such as microstructure, morphology, superconducting transition temperature, and critical current density. ©1995 American Institute of Physics.
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